BUZ32 H Infineon Technologies, BUZ32 H Datasheet - Page 5

• Manufacturer Part Number: BUZ32 H
• Description: MOSFET N-Channel 200V Transistor
• Manufacturer: Infineon Technologies

Specifications of BUZ32 H

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.5 A
• Resistance Drain-source Rds (on): 0.4 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 30 nS
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 75 W
• Rise Time: 40 nS
• Typical Turn-off Delay Time: 55 nS
• Part # Aliases: BUZ32HXK BUZ32HXKSA1 SP000682998

Power dissipation
P
P
Safe operating area
I
parameter: D = 0.01 , T
Rev. 2.4
D
tot
I
tot
D
= ƒ ( V
= ƒ ( T
10
10
10
10
80
60
50
40
30
20
10
W
A
-1
0
2
1
0
DS
10
0
C
0
)
)
20
40
10
60
1
C
= 25˚C
80
100
10
DC
2
120
t p = 7.6µs
10 µs
100 µs
1 ms
10 ms
V
T
˚C
C
DS
V
160
Page 5
Z
Transient thermal impedance
Z
parameter: D = t
Drain current
I
parameter: V
D
thJC
I
th JC
D
= ƒ ( T
K/W
10
10
10
10
10
= ƒ ( t
10
-1
-2
-3
A
1
0
8
7
6
5
4
3
2
1
0
10
C
0
)
-7
p
)
20
10
single pulse
GS
-6
p
≥ 10 V
40
/ T
10
-5
60
10
-4
80
10
100
-3
10
120
D = 0.50
-2
2009-11-10
BUZ 32 H
0.20
10
t
0.10
0.05
0.02
0.01
p
T
˚C
C
-1
s
10
160
0