BUZ32 H Infineon Technologies, BUZ32 H Datasheet - Page 6

• Manufacturer Part Number: BUZ32 H
• Description: MOSFET N-Channel 200V Transistor
• Manufacturer: Infineon Technologies

Specifications of BUZ32 H

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.5 A
• Resistance Drain-source Rds (on): 0.4 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 30 nS
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 75 W
• Rise Time: 40 nS
• Typical Turn-off Delay Time: 55 nS
• Part # Aliases: BUZ32HXK BUZ32HXKSA1 SP000682998

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics
parameter: t
V
Rev. 2.4
D
I
D
I
DS
D
= ƒ( V
≥
2 x I
13
11
10
22
18
16
14
12
10
A
9
8
7
6
5
4
3
2
1
0
A
8
6
4
2
0
DS
0
0
D
)
P
p
tot
x R
1
p
2
= 80 µs
= 75W
= 80 µs
DS(on)max
2
4
3
l
6
4
k
j
I
D
5
8
= f ( V
6
10
GS
7
)
12
8
i
g
e
c
a
h
f
d
b
V
V
V GS [V]
V
GS
i
j
k 10.0
l 20.0
a 4.0
b 4.5
c 5.0
d 5.5
e 6.0
f
g 7.0
h 7.5
DS
V
6.5
8.0
9.0
10
16
Page 6
Typ. forward transconductance
parameter: t
V
R
g
Typ. drain-source on-resistance
R
parameter: V
DS
fs
DS (on)
DS (on)
≥
2 x I
6.0
5.0
4.5
4.0
3.5
3.0
1.5
1.0
2.5
2.0
0.5
0.0
1.3
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
S
Ω
0
0
D
= ƒ( I
V
V
GS
x R
GS
4.0
4.5
a
a
p
a
= 80 µs,
[V] =
[V] =
D
GS
5.0
DS(on)max
b
2
)
4
b
5.5
c
c
6.0
4
d
8
6.5
e
d
7.0
6
f
12
g
e
7.5
g
fs
= f
8
8.0
h
f
( I
9.0
16
D
i
g
)
2009-11-10
10.0
BUZ 32 H
A
j
I
h
D
I
D
A
k
20.0
k
i
j
12
22