PSMN5R0-80BS,118 NXP Semiconductors, PSMN5R0-80BS,118 Datasheet - Page 11
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PSMN5R0-80BS,118
Manufacturer Part Number
PSMN5R0-80BS,118
Description
MOSFET Std N-chanMOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN5R0-80BS118.pdf
(15 pages)
Specifications of PSMN5R0-80BS,118
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Resistance Drain-source Rds (on)
5.1 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
D2PAK
Minimum Operating Temperature
- 55 C
Power Dissipation
270 W
Factory Pack Quantity
800
NXP Semiconductors
8. Package outline
Fig 18. Package outline SOT404 (D2PAK)
PSMN5R0-80BS
Product data sheet
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
D
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
All information provided in this document is subject to legal disclaimers.
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
10.30
Rev. 1 — 20 March 2012
9.70
E
3
0
b
N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK
2.54
e
JEITA
scale
2.5
2.90
2.10
L p
5 mm
15.80
14.80
H D
mounting
2.60
2.20
Q
base
L p
PSMN5R0-80BS
A 1
Q
PROJECTION
c
EUROPEAN
A
© NXP B.V. 2012. All rights reserved.
ISSUE DATE
05-02-11
06-03-16
SOT404
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