PSMN5R0-80BS,118 NXP Semiconductors, PSMN5R0-80BS,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN5R0-80BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN5R0-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 5.1 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 270 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN5R0-80BS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
R
(mΩ)
(A)
I
10
10
10
10
10
10
D
DSon
40
30
20
10
−1
−2
−3
−4
−5
−6
0
of gate-source voltage; typical values
gate-source voltage
Drain-source on-state resistance as a function
0
0
5
2
min
10
typ
4
15
max
V
All information provided in this document is subject to legal disclaimers.
GS
V
003aad089
GS
(V)
03aa35
(V)
20
6
Rev. 1 — 20 March 2012
N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
V
GS(th)
(V)
R
(mΩ)
DSon
10
5
4
3
2
1
0
8
6
4
2
−60
junction temperature
of drain current; typical values
0
50
0
V
GS
PSMN5R0-80BS
(V) = 5
100
60
max
min
typ
150
120
200
© NXP B.V. 2012. All rights reserved.
003aad082
003aad280
T
10
20
j
I
(°C)
D
5.5
(A)
6
250
180
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