PSMN5R0-80BS,118 NXP Semiconductors, PSMN5R0-80BS,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN5R0-80BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN5R0-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 5.1 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 270 W
• Factory Pack Quantity: 800

NXP Semiconductors
Table 7.
Tested to JEDEC standards where applicable.
PSMN5R0-80BS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
10000
9000
8000
7000
6000
5000
4000
3000
(pF)
C
250
200
150
100
(A)
50
I
D
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Input and reverse transfer capacitances as a
2
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
4
1
10
6 5.5
…continued
6
2
C
rss
C
iss
V
GS
8
3
(V) = 4
All information provided in this document is subject to legal disclaimers.
V
003aad081
003aad087
V
DS
GS
(V)
4.5
(V)
Conditions
I
see
I
V
5
S
S
10
GS
4
Rev. 1 — 20 March 2012
= 25 A; V
= 25 A; dI
Figure 17
= 0 V; V
N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK
GS
S
DS
/dt = 100 A/µs;
= 0 V; T
Fig 6.
Fig 8.
= 40 V
(S)
g
fs
140
120
100
(A)
100
80
60
40
20
I
D
80
60
40
20
0
0
j
function of gate-source voltage; typical values
drain current; typical values
= 25 °C;
Transfer characteristics: drain current as a
Forward transconductance as a function of
0
0
20
1
40
PSMN5R0-80BS
2
T
Min
-
-
-
j
60
= 175 °C
3
80
Typ
0.8
56
116
© NXP B.V. 2012. All rights reserved.
4
100
003aad083
003aad088
V
GS
I
25 °C
Max
1.2
-
-
D
(A)
(V)
120
5
Unit
V
ns
nC
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