NX3008PBKS,115 NXP Semiconductors, NX3008PBKS,115 Datasheet - Page 10

• Manufacturer Part Number: NX3008PBKS,115
• Description: MOSFET 30V 200 MA DUAL P-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008PBKS,115

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 200 mA
• Resistance Drain-source Rds (on): 2.8 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-88
• Fall Time: 38 ns
• Gate Charge Qg: 0.55 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 445 mW
• Rise Time: 30 ns
• Factory Pack Quantity: 3000

NXP Semiconductors
NX3008PBKS
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
-5
-4
-3
-2
-1
0
0.0
charge; typical values
I
V
(1) T
(2) T
D
GS
= -200 mA; V
= 0 V
j
j
0.1
= 150 °C
= 25 °C
0.2
DS
0.3
= -15 V; T
0.4
(A)
-0.25
-0.20
-0.15
-0.10
-0.05
I
0.00
S
0.5
amb
0.0
All information provided in this document is subject to legal disclaimers.
= 25 °C
001aao264
0.6
Q
G
(nC)
0.7
Rev. 1 — 1 August 2011
-0.4
(1)
Fig 15. Gate charge waveform definitions
-0.8
30 V, 200 mA dual P-channel Trench MOSFET
(2)
V
V
SD
V
V
V
GS(pl)
001aao265
DS
GS(th)
GS
(V)
-1.2
Q
GS1
I
Q
D
GS
Q
GS2
NX3008PBKS
Q
G(tot)
Q
GD
© NXP B.V. 2011. All rights reserved.
003aaa508
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