NX3008PBKS,115 NXP Semiconductors, NX3008PBKS,115 Datasheet - Page 17

• Manufacturer Part Number: NX3008PBKS,115
• Description: MOSFET 30V 200 MA DUAL P-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008PBKS,115

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 200 mA
• Resistance Drain-source Rds (on): 2.8 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-88
• Fall Time: 38 ns
• Gate Charge Qg: 0.55 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 445 mW
• Rise Time: 30 ns
• Factory Pack Quantity: 3000

NXP Semiconductors
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
12.1
12.2
12.3
12.4
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .14
Legal information. . . . . . . . . . . . . . . . . . . . . . . .15
Contact information. . . . . . . . . . . . . . . . . . . . . .16
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Quality information . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
30 V, 200 mA dual P-channel Trench MOSFET
NX3008PBKS
Document identifier: NX3008PBKS
Date of release: 1 August 2011
All rights reserved.