NX3008PBKS,115 NXP Semiconductors, NX3008PBKS,115 Datasheet - Page 13

• Manufacturer Part Number: NX3008PBKS,115
• Description: MOSFET 30V 200 MA DUAL P-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008PBKS,115

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 200 mA
• Resistance Drain-source Rds (on): 2.8 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-88
• Fall Time: 38 ns
• Gate Charge Qg: 0.55 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 445 mW
• Rise Time: 30 ns
• Factory Pack Quantity: 3000

NXP Semiconductors
10. Soldering
NX3008PBKS
Product data sheet
Fig 19. Reflow soldering footprint for SOT363 (SC-88)
Fig 20. Wave soldering footprint for SOT363 (SC-88)
4.5
2.35
1.5
1.3
(4×)
0.6
(4×)
0.5
2.45
5.3
(4×)
(4×)
0.5
0.6
All information provided in this document is subject to legal disclaimers.
1.3
2.65
1.8
Rev. 1 — 1 August 2011
(2×)
0.6
1.5
1.5
0.4 (2×)
0.3
30 V, 200 mA dual P-channel Trench MOSFET
2.5
Dimensions in mm
direction during soldering
Dimensions in mm
solder lands
solder resist
solder paste
occupied area
preferred transport
NX3008PBKS
sot363_fr
solder lands
solder resist
occupied area
sot363_fw
© NXP B.V. 2011. All rights reserved.
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