NX3008PBKS,115 NXP Semiconductors, NX3008PBKS,115 Datasheet - Page 14

• Manufacturer Part Number: NX3008PBKS,115
• Description: MOSFET 30V 200 MA DUAL P-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008PBKS,115

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 200 mA
• Resistance Drain-source Rds (on): 2.8 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-88
• Fall Time: 38 ns
• Gate Charge Qg: 0.55 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 445 mW
• Rise Time: 30 ns
• Factory Pack Quantity: 3000

NXP Semiconductors
11. Revision history
Table 8.
NX3008PBKS
Product data sheet
Document ID
NX3008PBKS v.1
Revision history
Release date
20110801
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Rev. 1 — 1 August 2011
30 V, 200 mA dual P-channel Trench MOSFET
Change notice
-
NX3008PBKS
Supersedes
-
© NXP B.V. 2011. All rights reserved.
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