IPB107N20NAXT Infineon Technologies, IPB107N20NAXT Datasheet - Page 2

• Manufacturer Part Number: IPB107N20NAXT
• Description: MOSFET OptiMOS 3 Power Transistor
• Manufacturer: Infineon Technologies

Specifications of IPB107N20NAXT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 10.7 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO263-3
• Fall Time: 11 ns
• Gate Charge Qg: 65 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 26 ns
• Typical Turn-off Delay Time: 41 ns
• Part # Aliases: IPB107N20NA IPB107N20NAATMA1

Rev. 2.1
2)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
thJC
thJA
DS(on)
minimal footprint
6 cm2 cooling area
V
V
V
T
V
T
V
V
(TO220)
V
(TO263)
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
page 2
=0 V, I
=V
=160 V, V
=160 V, V
=20 V, V
=10 V, I
=10 V, I
GS
, I
D
2
D
=1 mA
D
D
=270 µA
(one layer, 70 µm thick) copper area for drain
DS
=88 A,
=88 A,
GS
GS
=0 V
=0 V,
=0 V,
2)
IPB107N20NA
min.
200
2
-
-
-
-
-
-
-
-
Values
typ.
0.1
9.9
9.6
10
3
1
-
-
-
-
IPP110N20NA
max.
10.7
100
100
0.5
62
40
11
4
1
-
2011-05-11
Unit
K/W
V
µA
nA
mW