IPB107N20NAXT Infineon Technologies, IPB107N20NAXT Datasheet - Page 6

• Manufacturer Part Number: IPB107N20NAXT
• Description: MOSFET OptiMOS 3 Power Transistor
• Manufacturer: Infineon Technologies

Specifications of IPB107N20NAXT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 10.7 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO263-3
• Fall Time: 11 ns
• Gate Charge Qg: 65 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 26 ns
• Typical Turn-off Delay Time: 41 ns
• Part # Aliases: IPB107N20NA IPB107N20NAATMA1

Rev. 2.1
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
35
30
25
20
15
10
DS
=f(T
5
0
4
3
2
1
); V
-60
0
j
); I
GS
D
=0 V; f =1 MHz
Crss
=88 A; V
-20
Coss
40
20
GS
=10 V
V
T
DS
j
60
80
[°C]
typ
Ciss
[V]
100
120
140
180
160
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
10
=f(T
3.5
2.5
1.5
0.5
SD
3
2
1
0
4
3
2
1
0
)
-60
0
j
); V
D
j
GS
-20
=V
IPB107N20NA
0.5
DS
175 °C
20
V
T
SD
j
270 µA
60
[°C]
1
[V]
2700 µA
25 °C
100
IPP110N20NA
1.5
140
2011-05-11
180
2