IPB107N20NAXT Infineon Technologies, IPB107N20NAXT Datasheet - Page 8

• Manufacturer Part Number: IPB107N20NAXT
• Description: MOSFET OptiMOS 3 Power Transistor
• Manufacturer: Infineon Technologies

Specifications of IPB107N20NAXT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 10.7 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO263-3
• Fall Time: 11 ns
• Gate Charge Qg: 65 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 26 ns
• Typical Turn-off Delay Time: 41 ns
• Part # Aliases: IPB107N20NA IPB107N20NAATMA1

IPB107N20NA
IPP110N20NA
PG-TO220-3: Outline
Rev. 2.1
page 8
2011-05-11