IPB107N20NAXT Infineon Technologies, IPB107N20NAXT Datasheet - Page 3

• Manufacturer Part Number: IPB107N20NAXT
• Description: MOSFET OptiMOS 3 Power Transistor
• Manufacturer: Infineon Technologies

Specifications of IPB107N20NAXT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 10.7 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO263-3
• Fall Time: 11 ns
• Gate Charge Qg: 65 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 26 ns
• Typical Turn-off Delay Time: 41 ns
• Part # Aliases: IPB107N20NA IPB107N20NAATMA1

Rev. 2.1
3)
4)
Parameter
Dynamic characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
See figure 16 for gate charge parameter definition
Not subjected to production test - verified by design/characterization
4)
4)
3)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
V
Q
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
gd
sw
g
oss
rr
V
f =1 MHz
V
V
R
V
V
V
T
V
T
V
di
C
j
GS
DD
GS
DD
GS
DD
GS
R
G
=25 °C
F
page 3
=25 °C
=100 V, I
/dt =100 A/µs
=1.6 W
=0 V, V
=100 V,
=10 V, I
=100 V, I
=0 to 10 V
=100 V, V
=0 V, I
F
DS
=88 A,
D
F
=44 A,
=44 A,
D
=100 V,
GS
=44 A,
=0 V
IPB107N20NA
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
5340
typ.
401
162
142
640
4.4
18
26
41
11
23
15
65
5
8
1
-
-
IPP110N20NA
max.
7100
533
216
352
1.2
87
88
-
-
-
-
-
-
-
-
-
-
2011-05-11
Unit
pF
ns
nC
V
nC
A
V
ns
nC