SSM6J08FUTE85LF Toshiba, SSM6J08FUTE85LF Datasheet
SSM6J08FUTE85LF
Specifications of SSM6J08FUTE85LF
Related parts for SSM6J08FUTE85LF
SSM6J08FUTE85LF Summary of contents
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
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Electrical Characteristics Characteristics Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time Note 3: Pulse test Switching Time ...
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I – −3.0 Common Source −2.5 −10 −4 25°C −2.5 −2.0 −2.0 −1.8 −1.5 −1.0 −1.6 −0 −1 −0.5 −1.0 −1.5 0 Drain-Source voltage V DS (V) R – I ...
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V – −1.0 Common Source −3 V −0 −0.1 mA −0.6 −0.4 −0.2 0 − 100 Ambient temperature Ta (°C) t – 1000 100 t off ...
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P – 350 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, 300 2 × pad: 0.32 mm Fig: 1 250 200 150 100 ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...