SSM6J08FUTE85LF Toshiba, SSM6J08FUTE85LF Datasheet - Page 4

• Manufacturer Part Number: SSM6J08FUTE85LF
• Description: MOSFET Vds=-20V Id=-1.3A 6Pin
• Manufacturer: Toshiba

Specifications of SSM6J08FUTE85LF

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 1.3 A
• Resistance Drain-source Rds (on): 140 mOhms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: ES-6
• Power Dissipation: 300 mW
• Factory Pack Quantity: 3000

1000
−1.0
−0.8
−0.6
−0.4
−0.2
100
−10
10
−8
−6
−4
−2
−0.01
−25
0
1
0
0
Common Source
I D = −1.3 A
Ta = 25°C
t on
t r
0
Ambient temperature Ta (°C)
2
Dynamic Input Characteristic
Total gate charge Q g (nC)
25
Drain current I D (A)
−0.1
t f
50
V
4
th
t – I
– Ta
t off
D
75
−10 V
−1
Common Source
V DD = −10 V
V GS = 0~−2.5 V
Ta = 25°C
R G = 4.7 Ω
6
Common Source
V DS = −3 V
I D = −0.1 mA
100
V DD = −16 V
125
8
150
−10
4
−0.01
−2.0
−1.5
−1.0
−0.5
−0.1
600
500
400
300
200
100
−10
−1
−0.1
0
0
0
0
I D max (continuous)
*: Single nonrepetitive
I D max (pulsed)
DC operation
Common Source
V GS = 0
Ta = 25°C
Ta = 25°C
Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
G
−4
Drain-Source voltage V
Drain-Source voltage V DS (V)
Drain-Source voltage V
Safe operating area
D
S
−1
I
−8
I
Mounted on FR4 board
(25.4 mm × 25.4 mm ×1.6 t
Cu pad: 0.32 mm
DR
DR
C – V
C oss
100 ms*
C iss
C rss
0.5
– V
DS
DS
−12
10 ms*
−10
Common Source
V GS = 0
f = 1 MHz
Ta = 25°C
DS
DS
2
× 6) Fig: 1
(V)
(V)
SSM6J08FU
−16
V DSS max
2007-11-01
−100
−20
1