SSM6J08FUTE85LF Toshiba, SSM6J08FUTE85LF Datasheet - Page 5

• Manufacturer Part Number: SSM6J08FUTE85LF
• Description: MOSFET Vds=-20V Id=-1.3A 6Pin
• Manufacturer: Toshiba

Specifications of SSM6J08FUTE85LF

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 1.3 A
• Resistance Drain-source Rds (on): 140 mOhms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: ES-6
• Power Dissipation: 300 mW
• Factory Pack Quantity: 3000

350
300
250
200
150
100
50
0
0
20
Ambient temperature Ta (°C)
40
1000
100
10
0.001
1
60
P
D
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
Cu pad: 0.32 mm
Fig: 1
80
– Ta
100
0.01
120
2
× 6)
140
0.1
160
Pulse width tw (s)
r
th
5
– t
1
w
10
Single pulse
Mounted on FR4 board (25.4 mm
× 25.4 mm × 1.6 t,
Cu pad: 0.32 mm
Fig: 1
100
2
× 6)
1000
SSM6J08FU
2007-11-01