BUK7635-100A /T3 NXP Semiconductors, BUK7635-100A /T3 Datasheet - Page 10

• Manufacturer Part Number: BUK7635-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7635-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 41 A
• Resistance Drain-source Rds (on): 0.035 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 35 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 149 W
• Rise Time: 67 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 56 ns
• Part # Aliases: BUK7635-100A,118

NXP Semiconductors
8. Revision history
Table 7.
BUK7635-100A
Product data sheet
Document ID
BUK7635-100A v.2
Modifications:
BUK7535_7635_100A v.1 20010202
Revision history
Release date
20110218
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK7635-100A separated from data sheet BUK7535_7635_100A v.1.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 18 February 2011
Data sheet status
Product data sheet
Product specification
N-channel TrenchMOS standard level FET
Change notice
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-
BUK7635-100A
Supersedes
BUK7535_7635_100A v.1
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© NXP B.V. 2011. All rights reserved.
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