BUK7635-100A /T3 NXP Semiconductors, BUK7635-100A /T3 Datasheet - Page 7

• Manufacturer Part Number: BUK7635-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7635-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 41 A
• Resistance Drain-source Rds (on): 0.035 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 35 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 149 W
• Rise Time: 67 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 56 ns
• Part # Aliases: BUK7635-100A,118

NXP Semiconductors
BUK7635-100A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
50
40
30
20
10
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
2
0
Tj = 175 °C
60
4
max
min
typ
120
6
Tj = 25 °C
All information provided in this document is subject to legal disclaimers.
V
T
GS
j
(°C)
03nd31
03aa32
(V)
Rev. 02 — 18 February 2011
180
8
Fig 10. Gate-source voltage as a function of turn-on
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
VGS
DSon
(V)
10
80
60
40
20
8
6
4
2
0
0
gate charge; typical values
of drain current; typical values
0
0
N-channel TrenchMOS standard level FET
5.5
6
20
50
6.5
BUK7635-100A
V
DD
= 14V
7
V
GS
100
40
(V) = 8
V
Q
© NXP B.V. 2011. All rights reserved.
DD
I
G
D
(A)
(nC)
= 80V
10
03nd29
03nd34
150
60
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