BUK7635-100A /T3 NXP Semiconductors, BUK7635-100A /T3 Datasheet - Page 4

• Manufacturer Part Number: BUK7635-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7635-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 41 A
• Resistance Drain-source Rds (on): 0.035 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 35 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 149 W
• Rise Time: 67 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 56 ns
• Part # Aliases: BUK7635-100A,118

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7635-100A
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10
10
10
10
−1
−2
−3
1
1
3
2
10
1
0.2
0.1
0.05
−6
P
δ = 0.5
0.02
Single Shot
R
DSon
t
p
T
= V
10
DS
δ =
−5
/ I
D
t
T
t
p
All information provided in this document is subject to legal disclaimers.
Conditions
see
mounted on a printed-circuit
board; minimum footprint
10
Rev. 02 — 18 February 2011
D.C.
10
−4
Figure 4
10
−3
10
10
N-channel TrenchMOS standard level FET
−2
2
t
100 μs
1 ms
10 ms
100 ms
p
= 10 μs
P
V
DS
10
t
p
−1
(V)
T
BUK7635-100A
t
p
Min
-
-
δ =
(s)
03nd36
03nd37
T
t
t
p
10
1
3
Typ
-
50
© NXP B.V. 2011. All rights reserved.
Max
1
-
Unit
K/W
K/W
4 of 13