BUK7635-100A /T3 NXP Semiconductors, BUK7635-100A /T3 Datasheet - Page 8

• Manufacturer Part Number: BUK7635-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7635-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 41 A
• Resistance Drain-source Rds (on): 0.035 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 35 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 149 W
• Rise Time: 67 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 56 ns
• Part # Aliases: BUK7635-100A,118

NXP Semiconductors
BUK7635-100A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
a
3
2
1
0
-60
factor as a function of junction temperature
0
60
(A)
I
S
60
40
20
120
0
0
All information provided in this document is subject to legal disclaimers.
T
j
( ° C)
03aa29
Rev. 02 — 18 February 2011
T
180
j
= 175 °C
0.5
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
T
j
= 25 °C
1.0
4500
4000
3500
3000
2500
2000
1500
1000
500
0
as a function of drain-source voltage; typical
values
V
10
SD
-2
N-channel TrenchMOS standard level FET
(V)
03nd28
C
C
C
iss
oss
rss
1.5
10
−1
BUK7635-100A
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nd35
(V)
10
2
8 of 13