AT25DF321A-SH-B Atmel, AT25DF321A-SH-B Datasheet - Page 13

• Manufacturer Part Number: AT25DF321A-SH-B
• Description: IC FLASH 32MBIT 100MHZ 8SOIC
• Manufacturer: Atmel

Specifications of AT25DF321A-SH-B

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 32M (16384 pages x 256 Bytes)
• Speed: 100MHz
• Interface: SPI, RapidS
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Memory Configuration: 16384 Pages X 256 Bytes
• Interface Type: Serial, SPI
• Clock Frequency: 100MHz
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3686D–DFLASH–12/09
8.3
Figure 8-4.
Block Erase
A block of 4-, 32-, or 64-Kbytes can be erased (all bits set to the logical “1” state) in a single operation by using one of
three different opcodes for the Block Erase command. An opcode of 20h is used for a 4-Kbyte erase, an opcode of 52h is
used for a 32-Kbyte erase, and an opcode of D8h is used for a 64-Kbyte erase. Before a Block Erase command can be
started, the Write Enable command must have been previously issued to the device to set the WEL bit of the Status
Register to a logical “1” state.
To perform a Block Erase, the CS pin must first be asserted and the appropriate opcode (20h, 52h, or D8h) must be
clocked into the device. After the opcode has been clocked in, the three address bytes specifying an address within the 4-
, 32-, or 64-Kbyte block to be erased must be clocked in. Any additional data clocked into the device will be ignored. When
the CS pin is deasserted, the device will erase the appropriate block. The erasing of the block is internally self-timed and
should take place in a time of t
Since the Block Erase command erases a region of bytes, the lower order address bits do not need to be decoded by the
device. Therefore, for a 4-Kbyte erase, address bits A11-A0 will be ignored by the device and their values can be either a
logical “1” or “0”. For a 32-Kbyte erase, address bits A14-A0 will be ignored, and for a 64-Kbyte erase, address bits
A15-A0 will be ignored by the device. Despite the lower order address bits not being decoded by the device, the
complete three address bytes must still be clocked into the device before the CS pin is deasserted, and the CS pin must be
deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort the operation and no erase
operation will be performed.
If the address specified by A23-A0 points to a memory location within a sector that is in the protected or locked down
state, then the Block Erase command will not be executed, and the device will return to the idle state once the CS pin has
been deasserted.
The WEL bit in the Status Register will be reset back to the logical “0” state if the erase cycle aborts due to an incomplete
address being sent, the CS pin being deasserted on uneven byte boundaries, or because a memory location within the
region to be erased is protected or locked down.
While the device is executing a successful erase cycle, the Status Register can be read and will indicate that the device is
busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the t
determine if the device has finished erasing. At some point before the erase cycle completes, the WEL bit in the Status
Register will be reset back to the logical “0” state.
The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase properly. If an
erase error occurs, it will be indicated by the EPE bit in the Status Register.
SCK
SOI
CS
SI
Dual-Input Page Program
HIGH-IMPEDANCE
MSB
1
0
0
1
1
2
OPCODE
0
3
0
4
BLKE
0
5
.
1
6
0
7
MSB
A
8
A
9
ADDRESS BITS A23-A0
A
10 11
A
A
12
A
A
29 30
A
A
31 32
MSB
D 6
D 7
DATA BYTE 1
INPUT
D 4
D 5
33
D 2
D 3
34
D 0
D 1
35
MSB
D 6
D 7
DATA BYTE 2
36
INPUT
D 4
D 5
37 38
D 2
D 3
D 0
D 1
39
Atmel AT25DF321A
MSB
D 6
D 7
DATA BYTE n
INPUT
D 4
D 5
D 2
D 3
D 0
D 1
BLKE
time to
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