BUK7608-55 /T3 NXP Semiconductors, BUK7608-55 /T3 Datasheet - Page 2

• Manufacturer Part Number: BUK7608-55 /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7608-55 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 50 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 187 W
• Rise Time: 70 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 100 ns
• Part # Aliases: BUK7608-55,118

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
April 1998
TrenchMOS
Standard level FET
j
SYMBOL PARAMETER
V
V
I
I
R
mb
SYMBOL PARAMETER
g
C
C
C
t
t
t
t
L
L
j
SYMBOL PARAMETER
I
I
V
t
Q
= 25˚C unless otherwise specified
DSS
GSS
d on
r
d off
f
DR
DRM
rr
= 25˚C unless otherwise specified
V
fs
d
s
(BR)DSS
GS(TO)
SD
DS(ON)
iss
oss
rss
rr
= 25˚C unless otherwise specified
(BR)GSS
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate-source breakdown
voltage
Drain-source on-state
resistance
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
transistor
CONDITIONS
V
V
V
V
I
V
CONDITIONS
V
V
V
V
Resistive load
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
CONDITIONS
I
I
I
V
G
F
F
F
GS
DS
DS
GS
GS
DS
GS
DD
GS
GS
= 25 A; V
= 75 A; V
= 75 A; -dI
= 1 mA;
= 0 V; I
= V
= 55 V; V
= 10 V; V
= 10 V; I
= 25 V; I
= 0 V; V
= 30 V; I
= 10 V; R
= -10 V; V
GS
; I
2
D
D
GS
GS
DS
D
D
D
F
= 0.25 mA;
= 1 mA
GS
/dt = 100 A/ s;
G
= 25 A
= 25 A
= 25 A;
= 0 V
= 0 V
R
DS
= 25 V; f = 1 MHz
= 10
= 30 V
= 0 V;
= 0 V
T
T
T
T
T
T
j
j
j
j
j
j
= 175˚C
= 175˚C
= 175˚C
= 175˚C
= -55˚C
= -55˚C
MIN.
MIN.
MIN.
55
50
16
10
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
3600
TYP.
0.05
0.02
0.85
0.18
830
320
100
3.0
6.5
2.5
7.5
1.0
45
27
70
50
65
-
-
-
-
-
-
-
-
-
-
Product specification
BUK7608-55
MAX.
MAX.
MAX.
4500
1000
500
440
105
140
240
4.0
4.4
1.2
10
20
17
40
70
75
1
8
-
-
-
-
-
-
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
m
m
nH
nH
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V
V
V
S
A
A
V
V
C
A
A
A
A