BUK7608-55 /T3 NXP Semiconductors, BUK7608-55 /T3 Datasheet - Page 7

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BUK7608-55 /T3

Manufacturer Part Number
BUK7608-55 /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7608-55 /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
75 A
Resistance Drain-source Rds (on)
0.008 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
50 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
187 W
Rise Time
70 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
100 ns
Part # Aliases
BUK7608-55,118
Philips Semiconductors
MECHANICAL DATA
MOUNTING INSTRUCTIONS
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
2. Epoxy meets UL94 V0 at 1/8".
April 1998
TrenchMOS
Standard level FET
Dimensions in mm
Net Mass: 1.4 g
Dimensions in mm
damage to MOS gate oxide.
transistor
2.54 (x2)
Fig.18. SOT404 : centre pin connected to mounting base.
Fig.19. SOT404 : soldering pattern for surface mounting .
10.3 max
9.0
0.85 max
(x2)
3.8
7
11 max
2.0
11.5
5.08
15.4
4.5 max
1.4 max
17.5
0.5
Product specification
2.5
BUK7608-55
Rev 1.000

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