BUK7608-55A /T3 NXP Semiconductors, BUK7608-55A /T3 Datasheet - Page 7
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BUK7608-55A /T3
Manufacturer Part Number
BUK7608-55A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7608-55A_T3.pdf
(14 pages)
Specifications of BUK7608-55A /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
126 A
Resistance Drain-source Rds (on)
0.008 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
80 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
254 W
Rise Time
94 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
100 ns
Part # Aliases
BUK7608-55A,118
NXP Semiconductors
BUK7608-55A
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
I
10
10
10
10
10
10
D
160
140
120
100
80
60
40
20
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
18 V
2
2
10 V
8.0 V
4
min
typ
6
4
V
GS
max
V
All information provided in this document is subject to legal disclaimers.
GS
8
= 4.5 V
V
5.5 V
5.0 V
DS
(V)
6.5 V
6.0 V
7.0 V
03nh45
03aa35
(V)
10
6
Rev. 03 — 14 June 2010
Fig 6.
Fig 8.
R
(mΩ)
DSon
(S)
g
fs
14
12
10
60
40
20
8
6
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
20
10
40
BUK7608-55A
60
15
© NXP B.V. 2010. All rights reserved.
V
80
GS
I
D
(V)
03nh44
03nh42
(A)
100
20
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