BUK7608-55A /T3 NXP Semiconductors, BUK7608-55A /T3 Datasheet - Page 8
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BUK7608-55A /T3
Manufacturer Part Number
BUK7608-55A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7608-55A_T3.pdf
(14 pages)
Specifications of BUK7608-55A /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
126 A
Resistance Drain-source Rds (on)
0.008 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
80 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
254 W
Rise Time
94 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
100 ns
Part # Aliases
BUK7608-55A,118
NXP Semiconductors
BUK7608-55A
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
(A)
DSon
I
D
100
80
60
40
20
25
20
15
10
0
5
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
20
V
GS
2
= 5.5 (V)
T
40
j
= 175 °C
60
4
80
6
10
T
j
= 25 °C
6
7.5
All information provided in this document is subject to legal disclaimers.
V
100
GS
I
D
03nh43
03nh46
(V)
6.5
(A)
7
120
9
8
Rev. 03 — 14 June 2010
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
1.5
0.5
a
5
4
3
2
1
0
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
BUK7608-55A
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
T
T
j
j
03ne89
(°C)
( ° C)
03aa32
180
180
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