SIA511DJ-T1-E3 Vishay/Siliconix, SIA511DJ-T1-E3 Datasheet - Page 10

• Manufacturer Part Number: SIA511DJ-T1-E3
• Description: MOSFET 12V 4.5A 6.5W
• Manufacturer: Vishay/Siliconix

Specifications of SIA511DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.5 A
• Resistance Drain-source Rds (on): 40 mOhms, 70 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6 Dual
• Fall Time: 15 ns at N Channel, 25 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 6.5 W
• Rise Time: 15 ns at N Channel, 25 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 35 ns at N Channel, 20 ns at P Channel
• Part # Aliases: SIA511DJ-E3

SiA511DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
10
8
6
4
2
0
0
Package Limited
25
D
T
C
is based on T
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
New Product
150
8
6
4
2
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
S-80436-Rev. B, 03-Mar-08
Document Number: 74592
100
125
150