SIA511DJ-T1-E3 Vishay/Siliconix, SIA511DJ-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SIA511DJ-T1-E3
• Description: MOSFET 12V 4.5A 6.5W
• Manufacturer: Vishay/Siliconix

Specifications of SIA511DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.5 A
• Resistance Drain-source Rds (on): 40 mOhms, 70 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6 Dual
• Fall Time: 15 ns at N Channel, 25 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 6.5 W
• Rise Time: 15 ns at N Channel, 25 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 35 ns at N Channel, 20 ns at P Channel
• Part # Aliases: SIA511DJ-E3

SiA511DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
8
6
4
2
0
0.0
0
0
I
D
= 4.3 A
0.4
2
V
DS
2
Output Characteristics
V
Q
GS
- Drain-to-Source Voltage (V)
g
- Total Gate Charge (nC)
I
= 1.8 V
D
Gate Charge
0.8
- Drain Current (A)
4
4
V
V
GS
V
GS
DS
1.2
6
= 2.5 V
= 4.5 V
V
= 6 V
GS
= 5 thru 2.5 V
V
V
V
GS
6
GS
DS
1.6
8
= 1.5 V
= 2 V
= 9.6 V
New Product
2.0
10
8
700
600
500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0.0
0
C
I
D
On-Resistance vs. Junction Temperature
rss
- 25
= 3.3 A
2
0.3
V
V
C
Transfer Characteristics
GS
DS
0
T
oss
T
J
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
V
= 125 °C
4
GS
25
T
Capacitance
0.6
C
= 4.5 V, 2.5 V, 1.8 V
C
= 25 °C
iss
50
6
S-80436-Rev. B, 03-Mar-08
Document Number: 74592
0.9
75
8
T
100
C
= - 55 °C
1.2
10
125
150
1.5
12