SIA511DJ-T1-E3 Vishay/Siliconix, SIA511DJ-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SIA511DJ-T1-E3
• Description: MOSFET 12V 4.5A 6.5W
• Manufacturer: Vishay/Siliconix

Specifications of SIA511DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.5 A
• Resistance Drain-source Rds (on): 40 mOhms, 70 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6 Dual
• Fall Time: 15 ns at N Channel, 25 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 6.5 W
• Rise Time: 15 ns at N Channel, 25 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 35 ns at N Channel, 20 ns at P Channel
• Part # Aliases: SIA511DJ-E3

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74592
S-80436-Rev. B, 03-Mar-08
0.8
0.7
0.6
0.5
0.4
0.3
0.1
10
1
- 50
0
Soure-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
T
= 150 °C
0.4
J
25
- Temperature (°C)
50
0.6
I
D
= 250 µA
75
0.8
0.01
0.1
10
T
100
1
J
0.1
= 25 °C
Limited by
R
* V
Safe Operating Area, Junction-to-Ambient
1.0
DS(on)
125
Single Pulse
GS
T
A
= 25 °C
*
minimum V
New Product
V
150
1.2
DS
- Drain-to-Source Voltage (V)
BVDSS Limited
1
GS
at which R
DS(on)
10
0.20
0.15
0.10
0.05
0.00
15
20
10
0.001
5
0
100 µs
1 ms
100 ms
1 s
10 s
10 ms
DC
0
is specified
I
On-Resistance vs. Gate-to-Source Voltage
D
= 3.3 A
Single Pulse Power, Junction-to-Ambient
0.01
1
100
V
GS
- Gate-to-Source Voltage (V)
0.1
2
Pulse (s)
1
Vishay Siliconix
3
10
SiA511DJ
www.vishay.com
4
100
125 °C
25 °C
5
1000
9