SIA511DJ-T1-E3 Vishay/Siliconix, SIA511DJ-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SIA511DJ-T1-E3
• Description: MOSFET 12V 4.5A 6.5W
• Manufacturer: Vishay/Siliconix

Specifications of SIA511DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.5 A
• Resistance Drain-source Rds (on): 40 mOhms, 70 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6 Dual
• Fall Time: 15 ns at N Channel, 25 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 6.5 W
• Rise Time: 15 ns at N Channel, 25 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 35 ns at N Channel, 20 ns at P Channel
• Part # Aliases: SIA511DJ-E3

SiA511DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
20
16
12
8
4
0
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
0.0
0
0
I
D
= 5.5 A
0.4
4
V
DS
2
Output Characteristics
Q
V
GS
V
g
- Drain-to-Source Voltage (V)
DS
- Total Gate Charge (nC)
I
D
= 1.8 V
Gate Charge
- Drain Current (A)
= 6 V
0.8
8
4
V
V
GS
GS
1.2
V
12
= 2.5 V
GS
= 4.5 V
= 5 thru 2.5 V
V
DS
V
V
V
6
GS
GS
= 9.6 V
GS
1.6
16
= 1.5 V
= 1 V
= 2 V
New Product
2.0
20
8
600
500
400
300
200
100
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
10
0
8
6
4
2
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
- 25
GS
C
T
rss
C
= 4.5 V, 2.5 V, 1.8 V, I
= 125 °C
V
V
0.5
DS
Transfer Characteristics
GS
3
0
T
J
T
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
C
= 25 °C
oss
C
25
Capacitance
iss
1.0
50
S-80436-Rev. B, 03-Mar-08
6
Document Number: 74592
D
= 4.2 A
75
T
C
1.5
100
= - 55 °C
9
125
2.0
150
12