SIA511DJ-T1-E3 Vishay/Siliconix, SIA511DJ-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SIA511DJ-T1-E3
• Description: MOSFET 12V 4.5A 6.5W
• Manufacturer: Vishay/Siliconix

Specifications of SIA511DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.5 A
• Resistance Drain-source Rds (on): 40 mOhms, 70 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6 Dual
• Fall Time: 15 ns at N Channel, 25 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 6.5 W
• Rise Time: 15 ns at N Channel, 25 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 35 ns at N Channel, 20 ns at P Channel
• Part # Aliases: SIA511DJ-E3

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74592
S-80436-Rev. B, 03-Mar-08
SPECIFICATIONS T
Parameter
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
J
a
= 25 °C, unless otherwise noted
Symbol
t
t
t
t
V
d(on)
d(off)
d(on)
d(off)
I
Q
SM
I
t
t
t
t
t
t
t
SD
S
rr
a
b
r
f
r
f
rr
I
I
F
F
I
I
New Product
D
D
I
= - 3.4 A, di/dt = - 100 A/µs, T
I
= 4.4 A, di/dt = 100 A/µs, T
D
D
≅ - 3.4 A, V
≅ - 3.4 A, V
≅ 4.4 A, V
≅ 4.4 A, V
V
V
I
V
V
I
S
DD
DD
S
DD
DD
= - 3.4 A, V
= 4.4 A, V
= - 6 V, R
= - 6 V, R
= 6 V, R
= 6 V, R
N-Channel
N-Channel
T
N-Channel
P-Channel
P-Channel
P-Channel
GEN
GEN
GEN
GEN
Test Conditions
C
= 25 °C
= 4.5 V, R
= - 4.5 V, R
= 10 V, R
= - 10 V, R
L
L
GS
L
L
GS
= 1.4 Ω
= 1.4 Ω
= 1.8 Ω
= 1.8 Ω
= 0 V
= 0 V
g
g
J
g
g
= 1 Ω
J
= 1 Ω
= 25 °C
= 1 Ω
= 25 °C
= 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Vishay Siliconix
Typ.
- 0.8
0.8
8.5
8.5
15
15
25
35
20
15
10
10
12
15
20
10
10
15
30
12
14
16
5
5
5
8
SiA511DJ
www.vishay.com
Max.
- 4.5
- 1.2
- 10
4.5
1.2
10
25
25
40
55
30
25
15
10
10
15
20
25
30
15
15
20
30
60
20
24
Unit
nC
ns
ns
ns
A
V
3