BUK9606-55B /T3 NXP Semiconductors, BUK9606-55B /T3 Datasheet - Page 10

• Manufacturer Part Number: BUK9606-55B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9606-55B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 146 A
• Resistance Drain-source Rds (on): 0.0054 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 106 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 258 W
• Rise Time: 95 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 117 ns
• Part # Aliases: BUK9606-55B,118

NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT404 (D2PAK)
BUK9606-55B_4
Product data sheet
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
D
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
10.30
9.70
Rev. 04 — 23 July 2009
E
3
0
b
2.54
e
JEITA
scale
2.5
2.90
2.10
L p
5 mm
15.80
14.80
H D
mounting
2.60
2.20
Q
base
L p
A 1
Q
PROJECTION
c
EUROPEAN
BUK9606-55B
A
N-channel TrenchMOS FET
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
05-02-11
06-03-16
SOT404
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