BUK9606-55B /T3 NXP Semiconductors, BUK9606-55B /T3 Datasheet - Page 4
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BUK9606-55B /T3
Manufacturer Part Number
BUK9606-55B /T3
Description
MOSFET HIGH PERF TRENCHMOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9606-55B_T3.pdf
(13 pages)
Specifications of BUK9606-55B /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
15 V
Continuous Drain Current
146 A
Resistance Drain-source Rds (on)
0.0054 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
106 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
258 W
Rise Time
95 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
117 ns
Part # Aliases
BUK9606-55B,118
NXP Semiconductors
BUK9606-55B_4
Product data sheet
Fig 3.
I
(A)
10
D
10
10
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
Capped at 75 A due to package
1
DSon
= V
Rev. 04 — 23 July 2009
DS
/ I
D
DC
10
BUK9606-55B
N-channel TrenchMOS FET
V
DS
(V)
© NXP B.V. 2009. All rights reserved.
t
p
= 10 μ s
100 μ s
1 ms
10 ms
100 ms
03nh83
10
2
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