BUK9606-55B /T3 NXP Semiconductors, BUK9606-55B /T3 Datasheet - Page 11

• Manufacturer Part Number: BUK9606-55B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9606-55B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 146 A
• Resistance Drain-source Rds (on): 0.0054 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 106 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 258 W
• Rise Time: 95 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 117 ns
• Part # Aliases: BUK9606-55B,118

NXP Semiconductors
8. Revision history
Table 7.
BUK9606-55B_4
Product data sheet
Document ID
BUK9606-55B_4
Modifications:
BUK95_96_9E06_55B_3
(9397 750 13519)
BUK95_96_9E06_55B-02
(9397 750 10474)
BUK95_96_9E06_55B-01
(9397 750 09946)
Revision history
Release date
20090723
20041130
20021010
20020813
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•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9606-55B separated from data sheet BUK95_96_9E06_55B_3.
Data sheet status
Product data sheet
Product data
Product data
Product data
Rev. 04 — 23 July 2009
Change notice
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-
-
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BUK9606-55B
N-channel TrenchMOS FET
Supersedes
BUK95_96_9E06_55B_3
BUK95_96_9E06_55B-02
BUK95_96_9E06_55B-01
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© NXP B.V. 2009. All rights reserved.
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