BUK9606-55B /T3 NXP Semiconductors, BUK9606-55B /T3 Datasheet - Page 2

• Manufacturer Part Number: BUK9606-55B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9606-55B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 146 A
• Resistance Drain-source Rds (on): 0.0054 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 106 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 258 W
• Rise Time: 95 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 117 ns
• Part # Aliases: BUK9606-55B,118

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
BUK9606-55B_4
Product data sheet
Pin
1
2
3
mb
Type number
BUK9606-55B
It is not possible to make a connection to pin 2.
Symbol
G
D
S
D
Pinning information
Ordering information
Package
Name
D2PAK
Description
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Symbol Parameter
Static characteristics
R
DSon
Continuous current is limited by package.
drain-source
on-state resistance
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
Quick reference
Rev. 04 — 23 July 2009
…continued
[1]
Conditions
V
T
see
V
T
see
j
j
GS
GS
= 25 °C;
= 25 °C;
Simplified outline
Figure 11
Figure 11
= 10 V; I
= 5 V; I
D
D
= 25 A;
and
and
(D2PAK)
SOT404
= 25 A;
1
mb
2
12
12
3
BUK9606-55B
N-channel TrenchMOS FET
Graphic symbol
Min
-
-
Typ
4.8
5.1
G
mbb076
© NXP B.V. 2009. All rights reserved.
Max
5.4
6
D
Version
SOT404
S
Unit
mΩ
mΩ
2 of 13