NDB6060L_Q Fairchild Semiconductor, NDB6060L_Q Datasheet

NDB6060L_Q

Manufacturer Part Number

NDB6060L_Q

Description

MOSFET N-Ch LL FET Enhancement Mode

Manufacturer

Fairchild Semiconductor

Datasheet

1.NDB6060L_Q.pdf (12 pages)

Specifications of NDB6060L_Q

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 16 V

Continuous Drain Current

48 A

Resistance Drain-source Rds (on)

0.025 Ohms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

TO-263AB

Fall Time

161 ns

Minimum Operating Temperature

- 65 C

Power Dissipation

100 W

Rise Time

320 ns

Typical Turn-off Delay Time

49 ns

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Absolute Maximum Ratings

________________________________________________________________________________

Symbol

NDP6060L / NDB6060L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

DSS

DGR

GSS

These logic level N-Channel enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulses in the

avalanche and commutation modes. These devices are

particularly suited for low voltage applications such as

automotive, DC/DC converters, PWM motor controls,

and other battery powered circuits where fast switching,

low in-line power loss, and resistance to transients are

needed.

General Description

STG

Parameter

Drain-Source Voltage

Drain-Gate Voltage (R

Gate-Source Voltage - Continuous

Drain Current

Total Power Dissipation @ T

Operating and Storage Temperature

Maximum lead temperature for soldering

purposes, 1/8" from case for 5 seconds

- Nonrepetitive (t

Derate above 25°C

- Continuous

- Pulsed

< 1 M )

= 25°C

< 50 µs)

= 25°C unless otherwise noted

NDP6060L

Features

48A, 60V. R

Low drive requirements allowing operation directly from logic

drivers. V

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

175°C maximum junction temperature rating.

High density cell design for extremely low R

TO-220 and TO-263 (D

and surface mount applications.

GS(TH)

DS(ON)

-65 to 175

< 2.0V.

± 16

± 25

0.67

144

100

275

= 0.025

PAK) package for both through hole

@ V

NDB6060L

= 5V.

NDP6060L Rev. D / NDB6060L Rev. E

DS(ON)

April 1996

Units

W/°C

°C

Related parts for NDB6060L_Q

NDB6060L_Q Summary of contents

Page 1

... Operating and Storage Temperature J STG Maximum lead temperature for soldering T L purposes, 1/8" from case for 5 seconds © 1997 Fairchild Semiconductor Corporation Features 48A, 60V. R Low drive requirements allowing operation directly from logic drivers. V Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175° ...

Page 2

Electrical Characteristics (T = 25°C unless otherwise noted) C Symbol Parameter DRAIN-SOURCE AVALANCHE RATINGS W Single Pulse Drain-Source Avalanche DSS Energy I Maximum Drain-Source Avalanche Current AR OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current ...

Page 3

Electrical Characteristics (T = 25°C unless otherwise noted) C Symbol Parameter DRAIN-SOURCE DIODE CHARACTERISTICS I Maximum Continuos Drain-Source Diode Forward Current S Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage SD Reverse Recovery Time t ...

Page 4

Typical Electrical Characteristics 10V GS 6.0 5 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 24A D 1.75 ...

Page 5

Typical Electrical Characteristics 1. 250µA D 1.1 1.05 1 0.95 0.9 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature ...

Page 6

Typical Electrical Characteristics -55°C J 25° 125° DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain Current. and Temperature 1 D ...

Page 7

... These larger or intermediate boxes then will b e placed finally inside a labeled shipping box whic h still comes in different sizes depending on the number of units shipped. FSCINT Labe l samp le FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B CBVK741B019 1080 LOT: ...

Page 8

TO-220 Tape and Reel Data and Package Dimensions, continued TO-220 (FS PKG Code 37) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 1.4378 September 1998, Rev. A ...

Page 9

TO-263AB/D 2 PAK Tape and Reel Data and Package Dimensions 2 TO-263AB/D PAK Packaging Configuration: Figure 1.0 Customized Label 2 TO-263AB/D PAK Packaging Information Standard L86Z Packaging Option (no flow code) Packaging type TNR Rail/Tube Qty per Reel/Tube/Bag 800 45 ...

Page 10

TO-263AB/D 2 PAK Tape and Reel Data and Package Dimensions, continued 2 TO-263AB/D PAK Embossed Carrier Tape Configuration: Figure 3 Pkg type O263AB/ 10.60 15.80 24.0 1. PAK +/-0.10 ...

Page 11

TO-263AB/D 2 PAK Tape and Reel Data and Package Dimensions, continued TO-263AB/D 2 PAK (FS PKG Code 45) Scale 1:1 on letter size paper Dimensions shown below are in: Part Weight per unit (gram): 1.4378 1:1 inches [millimeters] August 1998, ...

Page 12

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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