NDB6060L_Q Fairchild Semiconductor, NDB6060L_Q Datasheet - Page 3

• Manufacturer Part Number: NDB6060L_Q
• Description: MOSFET N-Ch LL FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDB6060L_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 48 A
• Resistance Drain-source Rds (on): 0.025 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Fall Time: 161 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 100 W
• Rise Time: 320 ns
• Typical Turn-off Delay Time: 49 ns

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS
I
I
V
t
I
THERMAL CHARACTERISTICS
R
R
S
SM
rr
rr
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
SD
JC
JA
Parameter
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(T
C
= 25°C unless otherwise noted)
Conditions
V
V
dI
GS
GS
F
/dt = 100 A/µs
= 0 V, I
= 0 V, I
S
F
= 24 A
= 48 A,
(Note 1)
T
J
= 125°C
Min
35
2
NDP6060L Rev. D / NDB6060L Rev. E
Typ
3.6
75
Max
62.5
144
140
1.3
1.2
1.5
48
8
Units
°C/W
°C/W
ns
A
A
V
A