NDB6060L_Q Fairchild Semiconductor, NDB6060L_Q Datasheet - Page 5

• Manufacturer Part Number: NDB6060L_Q
• Description: MOSFET N-Ch LL FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDB6060L_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 48 A
• Resistance Drain-source Rds (on): 0.025 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Fall Time: 161 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 100 W
• Rise Time: 320 ns
• Typical Turn-off Delay Time: 49 ns

Typical Electrical Characteristics
V
GEN
4 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
5 0 0
3 0 0
2 0 0
1 0 0
1.15
1.05
0.95
1.1
0.9
Figure 7. Breakdown Voltage Variation with
1
1
-50
Figure 9. Capacitance Characteristics.
I
D
Figure 11. Switching Test Circuit
R
f = 1 MHz
V
= 250µA
GS
Temperature.
-25
GEN
= 0 V
R
2
GS
V
DS
0
T
V
J
3
, DRAIN TO SOURCE VOLTAGE (V)
IN
, JUNCTION TEMPERATURE (°C)
G
2 5
5
5 0
D
S
V
DD
7 5
1 0
R
L
1 0 0
D U T
(continued)
2 0
1 2 5
.
C iss
V
C oss
3 0
O U T
1 5 0
C rss
1 7 5
5 0
V
t
V
O U T
d(on)
IN
0.0001
1 0
Figure 8. Body Diode Forward Voltage
1 0 %
0.001
8
6
4
2
0
0.01
Figure 10. Gate Charge Characteristics
0
0.1
8 0
1 0
1
0.2
I
D
T = 125°C
Figure 12. Switching Waveforms.
Variation with Current and Temperature
= 48A
J
t
5 0 %
o n
0.4
1 0 %
V
SD
2 0
t
9 0 %
PULSE W IDTH
0.6
r
, BODY DIODE FORWARD VOLTAGE (V)
Q
25°C
g
, GATE CHARGE (nC)
0.8
t
d(off)
V
4 0
DS
-55°C
1
= 12V
5 0 %
NDP6060L Rev. D / NDB6060L Rev. E
1.2
9 0 %
t
1 0 %
o f f
9 0 %
6 0
24V
1.4
48V
V
GS
INVERTED
.
t
= 0V
f
1.6
.
1.8
8 0