NDB6060L_Q Fairchild Semiconductor, NDB6060L_Q Datasheet - Page 11

• Manufacturer Part Number: NDB6060L_Q
• Description: MOSFET N-Ch LL FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDB6060L_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 48 A
• Resistance Drain-source Rds (on): 0.025 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Fall Time: 161 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 100 W
• Rise Time: 320 ns
• Typical Turn-off Delay Time: 49 ns

TO-263AB/D
2
PAK Tape and Reel Data and Package Dimensions, continued
2
TO-263AB/D
PAK (FS PKG Code 45)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
August 1998, Rev. A