NDB6060L_Q Fairchild Semiconductor, NDB6060L_Q Datasheet - Page 4

• Manufacturer Part Number: NDB6060L_Q
• Description: MOSFET N-Ch LL FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDB6060L_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 48 A
• Resistance Drain-source Rds (on): 0.025 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Fall Time: 161 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 100 W
• Rise Time: 320 ns
• Typical Turn-off Delay Time: 49 ns

Typical Electrical Characteristics
6 0
5 0
4 0
3 0
2 0
1 0
0
1 0 0
1
1.75
1.25
0.75
8 0
6 0
4 0
2 0
1.5
0.5
Figure 3. On-Resistance Variation
Figure 5. Transfer Characteristics.
0
2
1
0
-50
V
DS
Figure 1. On-Region Characteristics.
V
I
D
GS
= 10V
with Temperature.
= 24A
-25
= 5V
V
1
2
GS
V
GS
0
V
, GATE TO SOURCE VOLTAGE (V)
DS
T , JUNCTION TEMPERATURE (°C)
= 10V
J
, DRAIN-SOURCE VOLTAGE (V)
2 5
2
6.0
5 0
3
T = -55°C
J
5.0
7 5
4.5
3
1 0 0
4.0
25°C
4
3.5
1 2 5
4
3.0
125°C
1 5 0
2.5
1 7 5
5
5
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
1.8
1.6
1.4
1.2
0.8
0.6
1 .5
0 .5
1
2
1
Figure 4. On-Resistance Variation with Drain
-50
Figure 2. On-Resistance Variation with Gate
2
1
0
0
Figure 6. Gate Threshold Variation with
V
GS
-25
Current and Temperature.
Voltage and Drain Current.
V
= 5.0V
GS
Temperature.
20
= 3.0V
2 0
0
T , JUNCTION TEMPERATURE (°C)
J
T = 125°C
2 5
J
I , DRAIN CURRENT (A)
I
D
D
3.5
, DRAIN CURRENT (A)
40
4 0
5 0
4.0
7 5
25°C
60
6 0
NDP6060L Rev. D / NDB6060L Rev. E
100
4.5
I
D
-55°C
V
5.0
125
DS
= 250µA
80
8 0
5.5
= V
6.0
GS
150
1 0
1 0 0
100
175