BCM847DS /T3 NXP Semiconductors, BCM847DS /T3 Datasheet - Page 11

• Manufacturer Part Number: BCM847DS /T3
• Description: Transistors Bipolar - BJT TRANS MATCHED PAIR TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BCM847DS /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-457
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 380 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BCM847DS,135

NXP Semiconductors
BCM847BV_BS_DS_6
Product data sheet
Fig 16. Wave soldering footprint SOT363 (SC-88)
Fig 17. Reflow soldering footprint SOT457 (SC-74)
4.5
3.30
Dimensions in mm
2.825
1.3
0.95
Rev. 06 — 28 August 2009
2.45
5.3
1.3
3.45
1.95
1.60
1.70
3.10
3.20
1.5
1.5
msc422
0.3
0.45 0.55
NPN/NPN matched double transistors
BCM847BV/BS/DS
2.5
direction during soldering
Dimensions in mm
© NXP B.V. 2009. All rights reserved.
solder lands
preferred transport
solder resist
occupied area
solder paste
solder lands
solder resist
occupied area
sot363_fw
11 of 15