BCM847DS /T3 NXP Semiconductors, BCM847DS /T3 Datasheet - Page 7

• Manufacturer Part Number: BCM847DS /T3
• Description: Transistors Bipolar - BJT TRANS MATCHED PAIR TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BCM847DS /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-457
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 380 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BCM847DS,135

NXP Semiconductors
BCM847BV_BS_DS_6
Product data sheet
Fig 5.
Fig 7.
V
(pF)
(V)
C
BE
c
0.8
0.6
0.4
1
5
4
3
2
1
0
10
0
V
Base-emitter voltage as a function of collector
current; typical values
f = 1 MHz; T
Collector capacitance as a function of
collector-base voltage; typical values
CE
1
= 5 V; T
2
1
amb
amb
= 25 C
= 25 C
4
10
6
10
2
8
I
006aaa536
006aaa538
C
V
(mA)
CB
(V)
10
Rev. 06 — 28 August 2009
10
3
Fig 6.
Fig 8.
(MHz)
(pF)
C
f
T
10
10
e
10
15
13
11
9
7
5
3
2
1
V
Transition frequency as a function of collector
current; typical values
0
f = 1 MHz; T
Emitter capacitance as a function of
emitter-base voltage; typical values
CE
= 5 V; T
NPN/NPN matched double transistors
BCM847BV/BS/DS
amb
amb
2
= 25 C
= 25 C
10
4
I
C
(mA)
V
© NXP B.V. 2009. All rights reserved.
EB
006aaa537
006aaa539
(V)
10
6
2
7 of 15