BCM847DS /T3 NXP Semiconductors, BCM847DS /T3 Datasheet - Page 8

• Manufacturer Part Number: BCM847DS /T3
• Description: Transistors Bipolar - BJT TRANS MATCHED PAIR TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BCM847DS /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-457
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 380 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BCM847DS,135

NXP Semiconductors
8. Application information
9. Package outline
BCM847BV_BS_DS_6
Product data sheet
Fig 9.
Fig 11. Package outline SOT666
Fig 13. Package outline SOT457 (SC-74)
1.7
1.5
Dimensions in mm
1.3
1.1
Current mirror
pin 1 index
6
1
TR1
0.5
V
CC
R1
1.7
1.5
1
5
2
006aaa523
l
out
3.0
2.5
TR2
3
4
Dimensions in mm
0.27
0.17
1.7
1.3
0.3
0.1
pin 1 index
Rev. 06 — 28 August 2009
0.6
0.5
1
6
0.95
0.18
0.08
04-11-08
3.1
2.7
1.9
5
2
Fig 10. Differential amplifier
Fig 12. Package outline SOT363 (SC-88)
2.2
2.0
4
3
Dimensions in mm
0.40
0.25
1.35
1.15
0.6
0.2
OUT1
NPN/NPN matched double transistors
IN1
BCM847BV/BS/DS
pin 1
index
1
0.65
1.1
0.9
6
0.26
0.10
04-11-08
1.3
2.2
1.8
TR1
5
2
TR2
3
4
0.3
0.2
006aaa525
0.45
0.15
V
OUT2
IN2
V
© NXP B.V. 2009. All rights reserved.
0.25
0.10
1.1
0.8
06-03-16
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