BC 850B B6327 Infineon Technologies, BC 850B B6327 Datasheet - Page 10

• Manufacturer Part Number: BC 850B B6327
• Description: Transistors Bipolar - BJT LOW NOISE TRANSISTOR 45V 330mW
• Manufacturer: Infineon Technologies

Specifications of BC 850B B6327

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 200 mA
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 110
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 100 mA
• Dc Current Gain Hfe Max: 200 at 2 mA at 5 V
• Maximum Power Dissipation: 330 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Permissible Puls Load R
BC847BF-BC850BF
Permissible Puls Load R
BC847BL3, BC848BL3
K/W
10
10
10
10
10
10
10
10
-1
-1
2
1
0
2
1
0
10
10
-6
-7
10
10
-6
-5
10
10
-5
-4
10
-4
10
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
-3
10
thJS
thJS
-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10
=
=
10
-2
-2
(t
(t
p
p
s
)
)
t
t p
s
p
10
10
0
0
10
Permissible Pulse Load
P
BC847BF-BC850BF
Permissible Pulse Load
P
BC847BL3, BC848BL3
totmax
totmax
10
10
10
10
10
10
10
10
3
2
1
0
3
2
1
0
10
10
/P
/P
-6
-7
totDC
totDC
10
10
-6
-5
=
=
10
10
-5
(t
(t
p
p
-4
)
)
10
BC846...-BC850...
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-4
10
-3
10
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
10
-2
2007-04-20
-2
s
t
t
s
p
p
10
10
0
0