BC 850B B6327 Infineon Technologies, BC 850B B6327 Datasheet - Page 9

• Manufacturer Part Number: BC 850B B6327
• Description: Transistors Bipolar - BJT LOW NOISE TRANSISTOR 45V 330mW
• Manufacturer: Infineon Technologies

Specifications of BC 850B B6327

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 200 mA
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 110
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 100 mA
• Dc Current Gain Hfe Max: 200 at 2 mA at 5 V
• Maximum Power Dissipation: 330 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Total power dissipation P
BC847BL3/BC848BL3
Total power dissipation P
BC846W-BC850W
mW
mW
300
250
225
200
175
150
125
100
300
250
225
200
175
150
125
100
75
50
25
75
50
25
0
0
0
0
15
15
30
30
45
45
60
60
75
75
90 105 120 °C
90 105 120 °C
tot
tot
= (T
= (T
S
S
)
)
T
T
S
S
150
150
9
Total power dissipation P
BC847BT
Permissible Pulse Load
P
BC846/W-BC850/W
P
P
tot max
tot
totmax
DC
mW
300
250
225
200
175
150
125
100
75
50
25
10
10
10
10
0
5
5
0
/P
10
3
2
1
0
totDC
-6
15
10
30
=
-5
45
10
(t
p
60
-4
D
)
BC846...-BC850...
=
t
T
75
10
p
-3
90 105 120 °C
tot
t
p
10
= (T
-2
T
2007-04-20
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
S
s
p
EHP00362
)
T
S
10
150
0