BC 850B B6327 Infineon Technologies, BC 850B B6327 Datasheet - Page 18

• Manufacturer Part Number: BC 850B B6327
• Description: Transistors Bipolar - BJT LOW NOISE TRANSISTOR 45V 330mW
• Manufacturer: Infineon Technologies

Specifications of BC 850B B6327

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 200 mA
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 110
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 100 mA
• Dc Current Gain Hfe Max: 200 at 2 mA at 5 V
• Maximum Power Dissipation: 330 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Package Outline
Foot Print
For board assembly information please refer to Infineon website "Packages"
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
1
2
3
0.225
Pin 1
marking
1) Dimension applies to plated terminal
Top view
0.15
Copper
Pin 1
marking
0.6
0.225
0.05 MAX.
Package TSLP-3-1
Solder mask
0.76
0.4
4
+0.1
18
2 x 0.15
0.5
0.35
±0.035
±0.035
0.2
0.17
±0.05
Stencil apertures
1)
Bottom view
3
2
0.2
1)
0.5
0.6
0.45
BFR193L3
Type code
Pin 1 marking
Laser marking
±0.05
1
R0.1
BC846...-BC850...
2007-04-20