BC 850B B6327 Infineon Technologies, BC 850B B6327 Datasheet - Page 12

• Manufacturer Part Number: BC 850B B6327
• Description: Transistors Bipolar - BJT LOW NOISE TRANSISTOR 45V 330mW
• Manufacturer: Infineon Technologies

Specifications of BC 850B B6327

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 200 mA
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 110
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 100 mA
• Dc Current Gain Hfe Max: 200 at 2 mA at 5 V
• Maximum Power Dissipation: 330 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Noise figure F =
V
Noise figure F =
V
F
F
CE
CE
dB
20
15
10
dB
15
= 5V, f = 120Hz
20
10
= 5V, f = 10kHz
5
0
10
5
0
10
BC 846...850
BC 846...850
-3
-3
R
S
1 k
= 1 M
500
10
10
-2
-2
R
(I
(I
100 k
S
C
C
= 1 M
)
)
10
10
-1
-1
10 k
1 k
10
10
0
0
100 k
EHP00372
EHP00374
10 k
500
mA
mA
C
C
10
10
1
1
12
Noise figure F =
V
F
CE
dB
20
15
= 5V, f = 1kHz
10
5
0
10
BC 846...850
1 k
-3
10
R
-2
S
= 1 M
(I
C
BC846...-BC850...
)
10
-1
100 k
10
2007-04-20
10 k
0
EHP00373
500
mA
C
10
1