IS61LV12824-10BL-TR ISSI, Integrated Silicon Solution Inc, IS61LV12824-10BL-TR Datasheet - Page 2

• Manufacturer Part Number: IS61LV12824-10BL-TR
• Description: IC SRAM 3MBIT 10NS 119BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV12824-10BL-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 3M (128K x 24)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 119-BGA
• Density: 3Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 17b
• Package Type: BGA
• Operating Temp Range: 0C to 70C
• Number Of Ports: 1
• Supply Current: 180mA
• Operating Supply Voltage (min): 2.97V
• Operating Supply Voltage (max): 3.63V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 119
• Word Size: 24b
• Number Of Words: 128K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61LV12824
PIN CONFIGURATION - 119-pin PBGA
2
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
I/O12
I/O13
I/O14
I/O15
V
NC
NC
NC
NC
CCQ
1
V
GND
V
GND
V
GND
V
GND
V
GND
V
A11
A12
A10
NC
NC
A9
CCQ
CCQ
CCQ
CCQ
CCQ
CCQ
2
GND
GND
GND
GND
GND
GND
CE2
A14
A13
V
V
V
V
V
NC
A8
A7
3
CC
CC
CC
CC
CC
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
CE1
A15
WE
NC
NC
OE
4
GND
GND
GND
GND
GND
GND
CE2
A16
V
V
V
V
V
NC
A5
A0
A6
5
CC
CC
CC
CC
CC
V
GND
V
GND
V
GND
V
GND
V
GND
V
NC
NC
A4
A3
A1
A2
CCQ
CCQ
CCQ
CCQ
CCQ
CCQ
6
I/O10
I/O11
V
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
I/O9
NC
NC
NC
NC
CCQ
7
Integrated Silicon Solution, Inc. — 1-800-379-4774
PIN DESCRIPTIONS
A0-A16
I/O0-I/O23 Data Inputs/Outputs
CE1, CE2
CE2
OE
WE
NC
Vcc
V
GND
CCQ
Address Inputs
Chip Enable Input LOW
Chip Enable Input HIGH
Output Enable Input
Write Enable Input
No Connection
Power
I/O Power
Ground
ISSI
06/22/05
Rev. D
®