IS61LV12824-10BL-TR ISSI, Integrated Silicon Solution Inc, IS61LV12824-10BL-TR Datasheet - Page 7

• Manufacturer Part Number: IS61LV12824-10BL-TR
• Description: IC SRAM 3MBIT 10NS 119BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV12824-10BL-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 3M (128K x 24)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 119-BGA
• Density: 3Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 17b
• Package Type: BGA
• Operating Temp Range: 0C to 70C
• Number Of Ports: 1
• Supply Current: 180mA
• Operating Supply Voltage (min): 2.97V
• Operating Supply Voltage (max): 3.63V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 119
• Word Size: 24b
• Number Of Words: 128K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61LV12824
AC WAVEFORMS
READ CYCLE NO. 1
ADDRESS
READ CYCLE NO. 2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
06/22/05
ADDRESS
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE1, CE2 = V
3. Address is valid prior to or coincident with CE1, CE2 LOW and CE2 HIGH transition.
D
D
OUT
CS1
CS2
OUT
OE
t
t
LZCS1
LZCS2
PREVIOUS DATA VALID
(1,2)
(1,3)
HIGH-Z
(Address Controlled) (CE1 = CE2 = OE = V
t
AA
t
DOE
t
t
t
ACS1
ACS2
LZOE
t
OHA
IL
t
. CE2 = V
RC
t
AA
IH
t
.
RC
DATA VALID
IL
; CE2 = V
IH
)
DATA VALID
t
OHA
t
t
t
t
OHA
HZOE
HZCS1
HZCS2
ISSI
CS2_RD2.eps
READ1.eps
®
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