IS61LV12824-10BL-TR ISSI, Integrated Silicon Solution Inc, IS61LV12824-10BL-TR Datasheet - Page 9

• Manufacturer Part Number: IS61LV12824-10BL-TR
• Description: IC SRAM 3MBIT 10NS 119BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV12824-10BL-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 3M (128K x 24)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 119-BGA
• Density: 3Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 17b
• Package Type: BGA
• Operating Temp Range: 0C to 70C
• Number Of Ports: 1
• Supply Current: 180mA
• Operating Supply Voltage (min): 2.97V
• Operating Supply Voltage (max): 3.63V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 119
• Word Size: 24b
• Number Of Words: 128K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61LV12824
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
06/22/05
WRITE CYCLE NO. 1
WRITE CYCLE NO. 2
ADDRESS
ADDRESS
D
D
CE1
CE2
CE1
CE2
OUT
OUT
WE
D
WE
D
OE
IN
IN
LOW
HIGH
t
SA
DATA UNDEFINED
DATA UNDEFINED
t
(1)
(CE Controlled, OE = HIGH or LOW)
SA
(WE Controlled: OE = HIGH during Write Cycle)
VALID ADDRESS
t
t
t
AW
HZWE
HZWE
t
VALID ADDRESS
AW
t
t
t
t
PWE1
PWE1
PWE2
WC
t
t
t
SCE1
SCE2
WC
HIGH-Z
HIGH-Z
t
t
SD
SD
DATA
DATA
IN
IN
VALID
VALID
t
t
HD
HD
t
t
LZWE
LZWE
t
t
HA
HA
ISSI
CE2_WR2.eps
CE2_WR1.eps
®
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1
2
3
4
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8
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