IS42S32800D-6TL ISSI, Integrated Silicon Solution Inc, IS42S32800D-6TL Datasheet - Page 20
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IS42S32800D-6TL
Manufacturer Part Number
IS42S32800D-6TL
Description
IC SDRAM 256MBIT 166MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Specifications of IS42S32800D-6TL
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOPII
Organization
8Mx32
Density
256Mb
Address Bus
13b
Access Time (max)
6.5/5.4ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
180mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Data Bus Width
32 bit
Maximum Clock Frequency
166 MHz
Access Time
6.5 ns, 5.4 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
180 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S32800D-6TL
Manufacturer:
ISSI
Quantity:
5 530
Part Number:
IS42S32800D-6TL
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS42S32800D-6TLI
Manufacturer:
ISSI
Quantity:
1 000
IS42S32800D
20
DC RECOMMENDED OPERATING CONDITIONS
Notes:
1. All voltages are referenced to V
2. V
3. V
CAPACITANCE CHARACTERISTICS
(At T
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant
Symbol
V
V
V
V
I
P
T
T
to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute
Maximum Rating conditions for extended periods may affect device reliability.
IH
IL
O
Symbol
Symbol
DD
DDQ
I
OPT
STG
O
D
A
(undershoot): V
(overshoot): V
V
C
V
C
V
C
V
= 0 ~ 70°C, V
DDQ
CLK
DD
I
IH
IL
IN
/
O
IH
IL
(max) = V
Parameter
Supply Voltage
Supply Voltage for DQ
High Level Input Voltage (all Inputs)
Low Level Input Voltage (all Inputs)
Input Capacitance, address & control pin
I
Data Input/Output Capacitance
Parameter
(min) = - 2V (pulse width 3ns)
nput Capacitance, CLK pin
Parameters
Supply Voltage (with respect to V
Supply Voltage for Output (with respect to V
Input Voltage
Output Voltage
Short circuit output current
Power Dissipation (
Operating Temperature
Storage Temperature
DD
= V
DD
SS
DDQ
=0V
+ 2V (pulse width 3ns)
= 3.3 ± 0.3V, V
(with respect to V
(with respect to V
T
A
= 25 °C)
(1)
SS
= V
SS
SS
SSQ
)
Com.
Ind.
SSQ
)
)
= 0V , unless otherwise noted)
Min.
-0.3
3.0
3.0
2.0
SSQ
Integrated Silicon Solution, Inc. — www.issi.com
)
–1.0 to V
–0.5 to V
Typ.
Min.
-40 to +85
3.3
3.3
3.0
–65 to +150
1.5
1.5
–0.5 to +4.6
–0.5 to +4.6
—
—
0 to +70
Rating
50
1
DDQ
DD
+0.5
V
+0.5
DD
Max.
Max.
3.6
3.6
3.0
3.0
5.5
+0.8
+ 0.3
Unit
mA
°C
°C
W
V
V
V
V
Unit
Unit
pF
pF
pF
V
V
V
V
Rev. 00B
11/21/07